| Title: | Preparation of K2ZnCl4 crystal | ||
| Application Number: | 89106607 | Application Date: | 1989.08.24 |
| Publication Number: | 1049689 | Publication Date: | 1991.03.06 |
| Approval Pub. Date: | Granted Pub. Date: | 1993.02.10 | |
| International Classifi-cation: | C30B7/04,C30B29/12,H01L37/02 | ||
| Applicant(s) Name: | Nankai Univ. | Address: | 300071 |
| Inventor(s) Name: | Che Yunxia, Shen Panwen | ||
| Attorney & Agent: | WANG HUILIN TIAN HAIAN | ||
|
|
|
||
Abstract: |
|||
| K2ZnCl4 is a new type of thermal power-release material. It has excellent property of thermal power-release. Its thermal power-release coefficient (P)=1.3*0.000000001 (C/cm2.deg), dielectric constant is 3.8, Curie temp. (Tc) is 120 deg.C, ratio of merit (p/ ) is about 3.42*0.000000001 (C/cm2.deg). It is a thermal power-release material for prospective application. | |||
|
|
|||
| Time: | 7 | ||
<- Previous Patent:Method of controlling nitrogen co...
| Next Patent:Process for preparing of large si... ->
|
|||