Title: Process for preparing of large size electro-monocrystal with complete crystal shape
Application Number: 89106608 Application Date: 1989.08.24
Publication Number: 1049690 Publication Date: 1991.03.06
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: C30B7/08,C30B29/54,H01L37/02
Applicant(s) Name: Nankai Univ. Address:
Inventor(s) Name: Che Yunxia, Shen Panwen
Attorney & Agent: WANG HUILIN TIAN HAIAN
Abstract:
     In this invention, HBF4 is used partically to replace H2BeF4 in TGFb, by which a newer thermal power realease material of TGFbFb is synthesised. By this process, it is easy to form a crystal of large size and complete crystal structure. The thermal power release coefficent (P) of said material is higher than the P value of TGFb single crystal by a factor of 1/5, the ratio of merit (P/epsilon) > 1.93*0.0000000009 (coulomb/cm2.degree), curie-point temp.>72 deg C. The TGFbFb single crystal may be used for fabrication of infra-red parts of apparatus. Its sensitivity is higher than that of TGFb, and range of operation temperature is wider.
Time: 4
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