Title: Method for obtaining heterojunction semiconductor and super crystal lattice materials and equipments thereof
Application Number: 90105603 Application Date: 1990.01.10
Publication Number: 1053511 Publication Date: 1991.07.31
Approval Pub. Date: Granted Pub. Date: 1994.04.13
International Classifi-cation: C23C16/00,C30B25/00,H01L21/205
Applicant(s) Name: Nanjing Univ. Address: 210008
Inventor(s) Name: Hu Liqun
Attorney & Agent: CHEN JIANHE
Abstract:
     The present invention relates to a method for obtaining atomic-level lattice material on the semiconductor host material and its special-purpose growth equipment. A gas-phase material is introduced into a transparent chamber, and its vacuum condition is kept below 10 to the minus second power torr. It uses a lamp heating method to make the gas-phase material react and on the host surface to form reactrie deposition. Its reactive deposition temp. is above the pyrolytic temp. of the gas-phase material, and other critical reactive temp. To repeat the above-mentioned process, the multilayer homogeneous or heterogeneous super lattice material can be obtained. Its optimum growth temp. is controlled at the nearby temp. zone above gas-phase pyrolyzation temp. and other critical reaction temp. Its special-purpose equipments include conventional CVD equipment, vacuum-pumping equipment and lamp heating equipment, qualitytive flow amount controller.
Time: 12
<- Previous Patent:Growth method of colour crystal   |  Next Patent:Container for use in hydrothermal... ->