Title: Growth technique of scintillation crystal of barium fluoride possessing high resistance of irradiation
Application Number: 90102828 Application Date: 1990.03.31
Publication Number: 1055208 Publication Date: 1991.10.09
Approval Pub. Date: Granted Pub. Date: 1993.12.22
International Classifi-cation: C30B11/02,C30B29/12
Applicant(s) Name: Shanghai Silicate Reasearch Inst., Chinese Academy Address: 200050
Inventor(s) Name: Shen Dingzhong, Su Weitang, Su Weitang
Attorney & Agent: NIE SHUYI
Abstract:
     The main point of this invention is to prevent and eliminate the occurrence of oxidation pollution and hydrolysis. Its main technique is as follows: prepn. of high-pure fied BaF2 raw material with oxygen ions; the techniques for preventing hydrolysis and oxidation; application of lead-down furnace and platinum crucible for caltivation of oxide single crystal to fluoride crystal, etc. Since this invention needs not blending of injurious impurity such as Pb, the crystal prepared has strong capability of anti-irradiation, and furthermore, it saves investments, lowers the cost, and may produce large-size and superior quality of BaF2 twinkling crystal in batches.
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