Title: Doping technology of semiconductor
Application Number: 90102351 Application Date: 1990.04.25
Publication Number: 1056017 Publication Date: 1991.11.06
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: C30B31/02,H01L21/225
Applicant(s) Name: Microelectronic Center, Chinese Academy of Science Address: 100010
Inventor(s) Name: Li Xiuqiong, Ma Xiangbin
Attorney & Agent: LU JI
Abstract:
     This invention discloses a doping technology of semiconductor by meas of glow discharge that is generated by applying a voltage between two electrodes in thin gas. It can effectively control shallow doped layer while obtain high doping level with uniform doping and less damage. This technology has the advantages of simple equipment, convenient operation and low cost.
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