Title: Double doped laser crystal
Application Number: 90107021 Application Date: 1990.08.17
Publication Number: 1059000 Publication Date: 1992.02.26
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: C30B29/28,H01S3/16
Applicant(s) Name: Changchun Applied Chemistry Inst., Chinese Academy Address: 130022
Inventor(s) Name:
Attorney & Agent: CAO GUIZHEN SONG TIANPING
Abstract:
     This invention relates to a new crystal material for laser. Er3 and Pr3 are co-doped into YAF4G crystal. Under the existance of low-concentration Er3 , its T13/2 energy level as final state of laser is turned on by cross relaxation to finally output 2.93 micrometers laser at room temp.
Time: 8