Title: Technology to control defect on silicon chip used for silicon semiconductor device
Application Number: 90107176 Application Date: 1990.08.20
Publication Number: 1050792 Publication Date: 1991.04.17
Approval Pub. Date: Granted Pub. Date: 1993.04.14
International Classifi-cation: C30B33/02,H01L21/322,H01L21/324
Applicant(s) Name: Hebei Polytechnical College Address: 300130
Inventor(s) Name:
Attorney & Agent: LI GUORU LI FENG
Abstract:
     The silicon monocrystal with required resistivity is at first radiated by fast neutrons and then processed into silicon chips. The qualified chips are directly passed into furnace for the first heat processing of the manufacturing process, where its temp. is raised to the level needed by the processing. After this, the control of defect on silicon chip is completed. This technology features greatly saving time and energy consumption, increasing finished product ratio and improving electric parameters, and is suitable for N-type, P-type and heavily doped silicon chips.
Time: 7
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