Title: Massive saphire growing technology
Application Number: 90105983 Application Date: 1990.11.27
Publication Number: 1061812 Publication Date: 1992.06.10
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: C30B15/00,C30B29/20
Applicant(s) Name: Yu Heqing Address: 214062
Inventor(s) Name:
Attorney & Agent: SHEN GENSHUI
Abstract:
     The invention provides a new method for producing big sapphire in the electro-vacuum field. The processing method requires a monocrystal furnace to have the low vacuum level kept at 0.01 torr and the high level at 0.00001 and the lead model and the heating zone burning at high temp. with the vacuum condition maintained at 0.001 torr; the temp. is close to the melting point of the sapphire; the crystalizing interface is kept to have a certain inclined shape; thus, the problem of escape of gas separated from crystalizing is thoroughly solved to ensure the sapphire quality. The rate of finished sapphire is about 80%. The invention brings an end to the difficult problem of making sapphire of big size by resistance-heating method.
Time: 4