Title: Liquid phase epitaxy isoelectron doping process
Application Number: 90109987 Application Date: 1990.12.18
Publication Number: 1052005 Publication Date: 1991.06.05
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: C30B19/02,H01L21/208,H01L21/22
Applicant(s) Name: Hebei Polytechnic College Address: 300130
Inventor(s) Name:
Attorney & Agent: LI GUORU CHU LE
Abstract:
     It features that in the manufacturing process of electronic device, an isoelectronic doping layer is firstly grown on the substrate by using the growing source under a specified temperature, then the epitaxial growth technique of device manufacturing is conducted. The advantages of said technique are easy operation, capable of makin gthe CaAs substrate with high dislocation density being reused and the produced device possessing of steady performance, high yield and low cost.
Time: 10