Title: Process for producing semiconductor device
Application Number: 01104687 Application Date: 1996.10.17
Publication Number: 1322008 Publication Date: 2001.11.14
Approval Pub. Date: 2006.01.04 Granted Pub. Date: 2006.01.04
International Classifi-cation: H01L21/306;H01L21/465;H01L31/18;C25F3/12
Applicant(s) Name: Canon K.K. Address:
Inventor(s) Name: Ichise Hirofumi;Sawayama Ippei;Hasebe Akio
Attorney & Agent: wang yonggang
Abstract:
    The present invention provides a method for etching an object having a portion to be etched on the surface thereof, comprising a step of immersing said object in an electrolyte solution such that said object serves as a negative electrode; a step of arranging a counter electrode having a pattern corresponding to a desired etching pattern to be formed at said portion to be etched of said object in said electrolyte solution so as to maintain a predetermined interval between said counter electrode and said object, and a step of applying a direct current or a pulse current between said object and said counter electrode to etch said portion to be etched of said object into a pattern corresponding to said pattern of said counter electrode. An etching apparatus is described comprising a substrate holding segment, an electrolytic bath for maintaining an electrolyte solution therein, a locomotive mechanism for moving the substrate holding segment, and a counter electrode holding segment for holding a counter electrode having a pattern corresponding a desired etching pattern to be formed at the portion to be etched of the substrate.
Time: 6
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