Title: Etching method, process for producing semiconductor element using said etching method
Application Number: 96119282 Application Date: 1996.10.17
Publication Number: 1163948 Publication Date: 1997.11.05
Approval Pub. Date: 2001.10.10 Granted Pub. Date: 2001.10.10
International Classifi-cation: C25F3/02;C25F3/12
Applicant(s) Name: Canon K.K. Address:
Inventor(s) Name: Ichise Hirofumi;Sawayama Ippei;Hasebe Akio
Attorney & Agent: WANG YIPING
Abstract:
    A method for etching an object having a portion to be etched on the surface thereof, comprising a step of immersing said object in an electrolyte solution such that said object serves as a negative electrode; a step of arranging a counter electrode having a pattern corresponding to a desired etching pattern to be formed at said portion to be etched of said object in said electrolyte solution so as to maintain a predetermined interval between said counter electrode and said object, and a step of applying a direct current or a pulse current between said object and said counter electrode to etch said portion to be etched of said object into a pattern corresponding to said pattern of said counter electrode. An etching apparatus is described comprising a substrate holding segment for holding a substrate with a portion to be etched, an electrolytic bath for maintaining an electrolyte solution therein, a locomotive mechanism for moving the substrate holding segment, and a counter electrode holding segment for holding a counter electrode. The counter electrode is positioned to oppose the substrate held on the substrate holding segment.
Time: 8