Title: Anodizing method and apparatus and semiconductor substrate manufacturing method
Application Number: 99102433 Application Date: 1999.02.26
Publication Number: 1227405 Publication Date: 1999.09.01
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: C25D17/00;C25F3/30;C25F7/00;H01L21/306;H01L21/316
Applicant(s) Name: Canon K. K. Address:
Inventor(s) Name: Kiyofumi Sakaguchi;Nobuhiko Sato
Attorney & Agent: wang sibeng
Abstract:
    A porous layer having a multilayered structure is formed. An Si substrate (102) to be processed is anodized in a first electrolytic solution (141, 151) while being held between an anode (106) and a cathode (104) in an anodizing bath (101). The first electrolytic solution (141, 151) is exchanged with a second electrolytic solution (142, 152). The Si substrate (102) is anodized again, thereby forming a porous layer having a multilayered structure on the Si substrate (102).
Time: 6