Title: Pressure boost adsorpotion low temprature boriding industrial art
Application Number: 85105278 Application Date: 1985.04.01
Publication Number: 1002157 Publication Date: 1986.08.06
Approval Pub. Date: Granted Pub. Date: 1987.06.03
International Classifi-cation: C23C8/70
Applicant(s) Name: Dalian Polytechnic College Address:
Inventor(s) Name: Chen Xiuji, Wang Dayong, Zhang Xuecheng
Attorney & Agent: XIU DEJIN
Abstract:
     This invention, based on the known boronization technology, has achieved boronization of precision parts at low temp. below A1 point, especially at a temp. range of 560-620 deg.C. This invention is characterized by retarding the dissociation of activator by means of increased presure, adding active adsorbent to adsorb and store up the boronization promoting gas produced on decomposition of the activator, then promoting the undecomposed activator to decompose steadily and the adsorbed boronization promoting gas to be gradually desorbed by means of reducing presure gradually, so as to ensure an unintermittent flow of boronization promoting gas in the boronization container and to enhance the speed of boronization.
Time: 6
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