Title: High-light ion metal-doping device and its method
Application Number: 85106757 Application Date: 1985.09.10
Publication Number: 1010416 Publication Date: 1987.04.15
Approval Pub. Date: Granted Pub. Date: 1990.11.21
International Classifi-cation: C23C10/00,C23C14/00,C23C14/48
Applicant(s) Name: Technology Inst., Ministry of Electronics Industry Address:
Inventor(s) Name:
Attorney & Agent: QIU YINGFENG XU XIAN
Abstract:
     The present invention discloses a high-light ion metal-doping device and its method which has been designed by using secondary firing phenomenon. The depth of doring layer is apparently increased. The thickness of molybdenum-doped layer can reach 285 micrometre. There is no limitation on sorts of metal to be doped. On the cathode seat there is a drum-type target made of the doped metal, work piece is put inside the target with broken doring metal around the work piece. Under suitable condition ionization causes "avalanche" inside drum-type target, forming a high-light ion region, and strong light ion metal-doping process is achieved. The temp. at this region can reach 1700 deg.C. It can be used as a novel high temp. energy source for scientific research.
Time: 7
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