Title: Electrolysis-crystalization method for producing high purity gallium
Application Number: 85102460 Application Date: 1985.04.01
Publication Number: 1003510 Publication Date: 1986.09.24
Approval Pub. Date: Granted Pub. Date: 1990.07.11
International Classifi-cation: C22B58/00,C25C1/22
Applicant(s) Name: Shandong Aluminium Plant Address:
Inventor(s) Name: Chen Jiantang, Gao Mingming
Attorney & Agent: YANG SIMING
Abstract:
     The technology is divided into two steps, electrolysis and seperation by crystallization. Trace impurities Fe. Cu. Pb. Zn. Sn. Si. Hg. Ni,etc. in raw gallium are removed so as to get product of 99.9999~99.99999% purity. In production, electric current density of the electrolytic cells should be controlled to between 0.02~0.05 A/cm2, cell voltage 2~3V, cell temperature 40~60 deg.C.crystallizing temperature 20 about 5 deg.C Refined gallium is washed by acid, then by water, and packed as product there after. This invention can be used to treat residual gallium from normal production, total extraction yield being over 98%.
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