Title: Chemical and mechanical polishing size and chemical and mechanical polishing method using said size
Application Number: 03103408 Application Date: 2003.01.27
Publication Number: 1441017 Publication Date: 2003.09.10
Approval Pub. Date: 2006.12.06 Granted Pub. Date: 2006.12.06
International Classifi-cation: H01L21/304;H01L21/302;C09K3/14;C09K13/00;C09G1/02
Applicant(s) Name: Samsung Electronics Co., Ltd. Address:
Inventor(s) Name: Lee Chae-Tong;Youn Po-Un;Han Young-Pil
Attorney & Agent: wang weiyu ding yebeng
Abstract:
    Slurries for chemical mechanical polishing (CMP) are provided including a high planarity slurry and high selectivity ratio slurry. A high planarity slurry includes at least one kind of metal oxide abrasive particle and an anionic polymer passivation agent having a first concentration. A high selectivity ratio slurry includes at least one kind of the metal oxide abrasive particle, the passivation agent in a second concentration that is less than the first concentration of the passivation agent for the high planarity slurry, one of a quaternary amine and the salt thereof, and a pH control agent. The high selectivity ratio slurry has a pH in a range of about over an isoelectric point of a polishing target layer and less than an isoelectric point of a polishing stopper. In addition, a CMP method using the CMP slurries having high planarity and high selectivity ratio is provided.
Time: 4
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