Title: Positive photoresist composition and method of forming resist pattern
Application Number: 200480019981 Application Date: 2004.07.13
Publication Number: 1823108 Publication Date: 2006.08.23
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: C08G14/00,G03F7/023
Applicant(s) Name: Tokyo Ohka Kogyo Co., Ltd. Address:
Inventor(s) Name: Masuda Yasuo
Attorney & Agent: cheng jinshan
Abstract:
     There is provided a positive photoresist composition capable of forming a pattern with excellent resolution, excellent resistance to reflection off the substrate, and excellent perpendicularity. The positive photoresist composition comprises (A) an alkali-soluble novolak resin in which a portion of the hydrogen atoms of all the phenolic hydroxyl groups are substituted with 1,2-naphthoquinonediazidesulfonyl groups, and (B) a dissolution promoter represented by a general formula (b-1) and/or a general formula (b-11) shown below.
Time: 8