Title: Method for forming semiconductor processing components
Application Number: 03814307 Application Date: 2003.06.17
Publication Number: 1662471 Publication Date: 2005.08.31
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: C04B35/573
Applicant(s) Name: Saint Gobain Ceramics Address:
Inventor(s) Name: Narendar Yeshwanth
Attorney & Agent: yu lan
Abstract:
     A method is disclosed for forming a silicon carbide component. The method calls for providing a preform, including carbon, purifying the preform to remove impurities to form a purified preform, and exposing the purified preform to a molten infiltrant which includes silicon. According to the foregoing method, the molten infiltrant reacts with the carbon to form silicon carbide. The silicon carbide component formed according to this method may be particularly suitable for use in semiconductor fabrication processes, as a semiconductor processing component.
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