Title: Method for preparing high-temperature superconducting material intrinsic junction
Application Number: 03131922 Application Date: 2003.06.18
Publication Number: 1471180 Publication Date: 2004.01.28
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: C04B35/00,H01B12/00,H01L39/22,H01L39/24
Applicant(s) Name: Nanjing Univ. Address: 210093
Inventor(s) Name: You Lixing, Wu Peiheng
Attorney & Agent: bai shangchun
Abstract:
     The invented method includes following steps. (1) Manual peeling, (2) metal layer protection, (3) fixation, (4) photo etching graphics, (5) ion etching, (6) insulation protection, (7) ultrasound cleaning, (8) structuring and connecting electrode. In step (5), ion etching with low energy is adopted. In step (8), two top electrodes are structured on mesa structure. The advantages of the invention are as follows. Through fine controlling parameters such as thickness of metal level and etching time etc. the invention realizes primary controlling number of intrinsic junction. The fine controlling number of junction is realized by second time of ion etching and added etching. The invention is suitable to control of number of intrinsic junction for a variety of high temperature super conducting material.
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