Title: Rod-like polycrystal GaN and its two-step prepn process
Application Number: 02136638 Application Date: 2002.08.20
Publication Number: 1398790 Publication Date: 2003.02.26
Approval Pub. Date: Granted Pub. Date: 2004.12.29
International Classifi-cation: C01B21/06,C01G15/00,C30B29/38
Applicant(s) Name: Zhejiang Univ. Address: 310027
Inventor(s) Name: Ye Zhizhen, Na Se'er
Attorney & Agent: han gemei
Abstract:
     Rod-like polycrystal GaN is prepared through two-step process including the steps of: firstly, washing substrate with cleaning liquid by use of the hot bath method; secondly hot evaporating metal Ga so as to make Ga atoms uniformly distributed on the surface of the substrate through the steps of setting the cleaned substrate in some tray of an evaporator, setting Ga source inside a quartz crucible of the evaporator, vacuum pumping the evaporator to 1E(-3)-1, Pa heating the substrate to 600-800 deg.c and heating Ga source to 600-900 deg.c; and thirdly nitriding the metal Ga layer in a heating furnace of nitriding equipment at normal pressure or vacuum through heating to 800-1000 deg.C and introducing pure nitrogen before cooling. The product of the present invention is rod-like polycrystal of 0.2-2 micron diameter and 10-20 micron length.
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