Title: One-dimensional hydrogen-storing carbon nano-material etched via microwave plasma and its prepn process
Application Number: 02138978 Application Date: 2002.08.28
Publication Number: 1398782 Publication Date: 2003.02.26
Approval Pub. Date: Granted Pub. Date: 2005.08.03
International Classifi-cation: B01J20/20,C23F4/00,C01B31/02
Applicant(s) Name: Wuhan Science Address: 430070
Inventor(s) Name: Mu Shichun, Pan Mu
Attorney & Agent: zhang anguo
Abstract:
     The present invention is a kind of one-dimensional hydrogen-stored nanometer carbon material and its preparation process, and features that the surface of one-dimensional nanometer carbon is etched by using the plasma etching process, and this increases and expand hydrogen diffusing passage, makes nmore hydrogen enter the interior of one-dimensional nanometer carbon, and raises its hydrogen storing capacity. Carbon nanometer tube and/or carbon nanometer fiber are etched in the microwave plasma generator with etching power of 0.3-3 KW, etching temperature of 300-1500 deg.C, treating pressure of 600-6000 Pa, etching gas hydrogen and condition gas of nitrogen and/or argon. The one-dimensional nanometer carbon of the present invention has hydrogen capacity of 2.5-4.5 wt%.
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