Title: System for preparing nanometer silicon nitride powder
Application Number: 02138263 Application Date: 2002.09.09
Publication Number: 1482059 Publication Date: 2004.03.17
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: B01J19/08,C01B21/068
Applicant(s) Name: Zhang Fenhong Address: 230031
Inventor(s) Name:
Attorney & Agent: tang maosheng
Abstract:
     The system for preparing nano silicon nitride material via plasma gaseous synthesis process includes plasma generator and gaseous synthesis apparatus. Solid Si3N4 and HCl the gaseous synthesis apparatus produces are made to enter the separator to decompress and disperse coagulated grains, and the trap collects the Si3N4 product. The plasma generator with rotary gas flow, anode in special structure and cooling water compression forms high speed and stable flame ion arc. The carrier gas distributor provides annular carrier gas to the reactor along its wall from top to bottom, so that the product particle is conveyed timely before growing and Si3N4 is collected in the cooling and trapping device to obtain nano silicon nitride powder.
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