| Title: | Gas phase synthetic apparatus for preparing nanometer silicon nitride powder | ||
| Application Number: | 02138262 | Application Date: | 2002.09.09 |
| Publication Number: | 1482058 | Publication Date: | 2004.03.17 |
| Approval Pub. Date: | Granted Pub. Date: | ||
| International Classifi-cation: | B01J19/08,C01B21/068 | ||
| Applicant(s) Name: | Zhang Fenhong | Address: | 230031 |
| Inventor(s) Name: | |||
| Attorney & Agent: | tang maosheng | ||
|
|
|
||
Abstract: |
|||
| The present invention discloses gaseous synthesis apparatus for the material to react fully to prepare nano silicon carbide powder. The apparatus includes reactor with Venturi cavity, and the cavity has upper end connected to ion arc output passage of the plasma generator. The upper end of the reactor is provided with carrier gas feeding passage communicated with the carrier gas distributor on the reactor, and the carrier gas distributor on the reactor has carrier gas passage entering the reactor along the inner wall of the reactor from top to bottom. Under the action of annular carrier gas and fast ion arc, the product particle is conveyed timely before growing and driven by the high speed airflow to enter to the cooling system without attaching to the wall of the reactor. | |||
|
|
|||
| Time: | 4 | ||
<- Previous Patent:System for preparing nanometer si...
| Next Patent:Colloidal dispersion of particles... ->
|
|||