Title: Silicon monoxide vapor deposition material and method for preparation thereof
Application Number: 02816621 Application Date: 2002.09.13
Publication Number: 1547622 Publication Date: 2004.11.17
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: C01B33/113,C23C14/24
Applicant(s) Name: Sumitomo Titanium Corp. Address:
Inventor(s) Name:
Attorney & Agent: wang weiyu ding yebeng
Abstract:
     A method is provided for preparing a silicon monoxide vapor deposition material where a mixture of a silicon powder and a silicon dioxide powder is heated and reacted in a raw material chamber under vacuum to generate a silicon monoxide gas, and silicon monoxide is precipitated on a precipitation substrate in a precipitation chamber provided above the raw material chamber. As the precipitation substrate, a cylindrical body is used where a circumference wall is inclined from the perpendicular by 1 to 45 degrees and the inner diameter of the upper end thereof is smaller than that of the lower end, and the precipitation is conducted under a vacuum of 7 Pa to 40 Pa. The method allows the preparation of a silicon monoxide vapor deposition material exhibiting a weight reduction rate in the rattler test (a rattler value) of 1.0% or less. the method provides reduced occurrences of the splash phenomenon during the formation of a silicon monoxide vapor deposition film.
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