| Title: | Light emitting element and light emitting device using this | ||
| Application Number: | 02819344 | Application Date: | 2002.09.27 |
| Publication Number: | 1561549 | Publication Date: | 2005.01.05 |
| Approval Pub. Date: | Granted Pub. Date: | ||
| International Classifi-cation: | C01B17/00,C01B25/45,C01B33/20,C01G45/00,H01L33/00 | ||
| Applicant(s) Name: | Matsushita Electric Ind Co., Ltd. | Address: | |
| Inventor(s) Name: | Oshio Shozo, Iwama Katsuaki, Kitahara Hiromi | ||
| Attorney & Agent: | wang huimin | ||
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Abstract: |
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| The present invention relates to a light emitting element and light emitting device using this. The semiconductor light emitting device is composed of a combination of a near ultraviolet LED and a phosphor layer including a plurality of phosphors for absorbing near ultraviolet emitted by the near ultraviolet LED and for emitting fluorescence having an emission peak in a visible wavelength region, and the phosphor layer includes four kinds of phosphors, that is, a blue-based phosphor, a green-based phosphor, a red-based phosphor and a yellow-based phosphor. Thus, lowering of luminous flux derived from red-based light with low luminosity is compensated by yellow-based light with comparatively high luminosity, and the resultant white-based light can be well color balanced, and hence, a semiconductor light emitting device emitting white-based light with high luminous flux and a large Ra can be obtained. | |||
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| Time: | 8 | ||
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