Title: Semiconductor device
Application Number: 200410060008 Application Date: 2004.06.18
Publication Number: 1573847 Publication Date: 2005.02.02
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: G02F1/136,G09F9/30,G09G3/20,G09G3/30,H01L23/60,H01L29/78,H01L29/861,H05B33/00
Applicant(s) Name: Semiconductor Energy Lab Address:
Inventor(s) Name: Osame Mitsuaki, Anzai Aya
Attorney & Agent: zhang xuemei liang yong
Abstract:
     A semiconductor device in which electrostatic discharge damage during manufacturing steps is prevented. More specifically, a semiconductor device in which electrostatic discharge damage during a step in which the formation of a pixel electrode is completed is prevented. A semiconductor device of the invention comprises a light emitting element, a driving transistor and a protection means disposed between the light emitting element and the driving transistor. The protection means comprises as least one of a resistor element, a capacitor element and a rectifier element. More specifically, the protection means is disposed between a pixel electrode of the light emitting element and a source electrode or a drain electrode of the driving transistor. It is to be noted that the rectifier element is an element having a rectifying function and corresponds to a diode or a transistor whose drain electrode and gate electrode are connected to each other.
Time: 4