Title: Semiconductor memory device
Application Number: 02157005 Application Date: 2002.12.16
Publication Number: 1452114 Publication Date: 2003.10.29
Approval Pub. Date: 2005.08.17 Granted Pub. Date: 2005.08.17
International Classifi-cation: G06G7/12
Applicant(s) Name: Mitsubishi Electric Corp. Address:
Inventor(s) Name: Kunikiyo Tatsuya
Attorney & Agent: liu zongjie ye kaidong
Abstract:
    Provided is an analog circuit, capable of correcting the dispersion of values of respective elements, which is caused by the dispersion of working upon manufacturing process, in the analog circuit comprising a filter, an amplifier and the like. The filter FT1 is a low-pass filter, to which a magnetic tunnel resistor MR and a capacitor C are connected in an L-shape. In the filter FT1, terminals T1, T2 are input terminals and terminals T3, T4 are output terminals. An electric current for changing the magnetizing direction of the magnetic tunnel resistor MR is supplied through an electric current source IP.
Time: 5