Title: Semiconductor integrated circuit apparatus
Application Number: 200610108114 Application Date: 2006.07.27
Publication Number: 1905192 Publication Date: 2007.01.31
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: H01L27/088;H01L27/092;G05F1/56;G01R19/00
Applicant(s) Name: Matsushita Electric Ind Co., Ltd. Address:
Inventor(s) Name: Ito Minoru
Attorney & Agent: lu xiaozhang li xiaoshu
Abstract:
    Semiconductor integrated circuit apparatus capable of raising detection sensitivity of a leakage current detection circuit and improving response. A semiconductor integrated circuit apparatus has a substrate voltage control block that supplies a substrate voltage to an internal circuit and controls NchMOS transistor threshold voltage of the internal circuit, and a leakage current detection circuit constituted by a leakage current detection NchMOS transistor supplied with a high potential side supply voltage to a drain, that has a source connected to a constant current source, and that is applied with an arbitrary stabilizing potential to a gate in such a manner that the substrate voltage is controlled by the substrate voltage control block, and a comparator comparing the source potential of the leakage current detection NchMOS transistor and a predetermined reference potential.
Time: 4