Title: Semiconductor integrated circuit device and electronic equipment
Application Number: 200610136112 Application Date: 2006.10.11
Publication Number: 1948974 Publication Date: 2007.04.18
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: G01R19/165;G05F3/16
Applicant(s) Name: Matsushita Electric Ind Co., Ltd. Address:
Inventor(s) Name: Ito Minoru
Attorney & Agent: shaoya li lixiao shu
Abstract:
    Semiconductor integrated circuit apparatus and electronic apparatus having a leakage current detection circuit where arbitrarily set leakage current detection ratio does not depend on power supply voltage, temperature, or manufacturing variations, and where leakage current detection is straightforward. Semiconductor integrated circuit apparatus extracts a stable potential from the center of two NchMIS transistors, amplifies drain current of an NchMOS transistor taking this potential as a gate potential to a current value of an arbitrary ratio using current mirror circuit, makes this current value flow through NchMOS transistor with the gate and drain connected, and applies drain potential of this NchMOS transistor to the gate of leakage current detection NchMOS transistor.
Time: 5
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