| Title: | Method and appts. for development of resist | ||
| Application Number: | 97190887 | Application Date: | 1997.07.03 |
| Publication Number: | 1197518 | Publication Date: | 1998.10.28 |
| Approval Pub. Date: | 2004.01.07 | Granted Pub. Date: | 2004.01.07 |
| International Classifi-cation: | G03F7/30 | ||
| Applicant(s) Name: | Seiko Epson Corp. | Address: | |
| Inventor(s) Name: | Gomi Tsugio | ||
| Attorney & Agent: | wang yonggang | ||
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Abstract: |
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| A development method and a development apparatus which improve the patterning precision of the resist development and avoid retardation and complexity of the development work in a lithography process. Said method and apparatus comprise: a developing bath (20) in which developer (22) is stored; guides (14 and 16) which introduce a flexible film (12) into the developing bath (20) which is coated with photoresist and exposed so as to dip the film (12) in the developer (22); and a pump (26) which applies a liquid pressure of the developer (22) to the flexible film (12) dipped in the developer (22) through outlets (28a). | |||
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| Time: | 8 | ||
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