| Title: | Alkysulfonyloximes for high-resolution I-line photoresists of high sensitivity | ||
| Application Number: | 97197557 | Application Date: | 1997.08.22 |
| Publication Number: | 1228851 | Publication Date: | 1999.09.15 |
| Approval Pub. Date: | 2004.01.07 | Granted Pub. Date: | 2004.01.07 |
| International Classifi-cation: | G03F7/004 | ||
| Applicant(s) Name: | CIBA Specialty Chemicals Holding Inc. | Address: | |
| Inventor(s) Name: | K. Dietliker;M. Kunz;H. Yamato | ||
| Attorney & Agent: | wu yuhe | ||
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Abstract: |
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| The invention describes the use of oxime alkyl sulfonate compounds of formula (1), wherein R is naphthyl, (2) or (3); R0 is either an R1-X group or R2; X is a direct bond, an oxygen atom or a sulfur atom; R1 is hydrogen, C1-C4 alkyl or a phenyl group which is unsubstituted or substituted by a substituent selected from the group consisting of chlorin, bromine, C1-C4 alkyl and C1-C4 alkyloxy; R2 is hydrogen or C1-C4 alkyl; and R3 is straight-chain or branched C1-C12 alkyl which is unsubstituted or substituted by one or more than one halogen atom; as photosentisitve acid generator in a chemically amplified photoresist which is developable in alkaline medium and which is sensitive to radiation at a wavelength of 340 to 390 nanometers and correspondingly composed positive and negative photoresists for the above-mentioned wavelength range. | |||
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| Time: | 7 | ||
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