Title: Semiconductor device and method for manufacturing the same
Application Number: 97123495 Application Date: 1997.12.31
Publication Number: 1221971 Publication Date: 1999.07.07
Approval Pub. Date: Granted Pub. Date: 2004.04.07
International Classifi-cation: G03F7/00,H01L21/30,H01L21/31
Applicant(s) Name: Mitsubishi Denki K. K. Address:
Inventor(s) Name: Takeo Ishibashi, Ayumi Minamide
Attorney & Agent: wang yonggang
Abstract:
     A first resist pattern, which is capable of generating an acid, is formed on a semiconductor device layer. Over the first resist pattern, a layer of a second resist, which is capable of undergoing a cross-linking reaction in the presence of an acid, is formed. Then, a cross-linked film is formed in portions of said layer of the second resist at the boundary with said first resist by action of an acid from said first resist. Thereafter, non-cross-linked portions of said second resist are removed to form a finely isolated resist pattern. The semiconductor device layer is etched, via a mask of said finely isolated resist pattern, to form a fine spaces or holes.
Time: 5
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