Title: Photomask for use in exposure and method for producing same
Application Number: 98100557 Application Date: 1998.02.20
Publication Number: 1192543 Publication Date: 1998.09.09
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: G03F1/08;H01L21/027
Applicant(s) Name: NEC Corp. Address:
Inventor(s) Name: Seiji Matsuura
Attorney & Agent: mu dejun
Abstract:
    An exposure photomask which transfers a desired pattern onto a semiconductor substrate S, which has a step, has a region formed by a light-blocking film and a region formed by a translucent film. The ideal optical path difference between exposure light that passes through the translucent film and exposure light that passes through a completely transparent part and the ideal mask pattern size are determined based on the step in the semiconductor substrate, and on the desired pattern size, the pattern being formed in accordance with the ideal optical path difference and ideal mask pattern size. The thickness of the translucent film is established so that the optical path difference between exposure light that passes through the translucent film and the exposure light that passes through a completely transparent part is approximately equal to the step in the semiconductor substrate.
Time: 5