Title: Material for forming fine pattern and method for manufacturing semiconductor device using the same
Application Number: 98105924 Application Date: 1998.03.30
Publication Number: 1199922 Publication Date: 1998.11.25
Approval Pub. Date: 2007.04.11 Granted Pub. Date: 2007.04.11
International Classifi-cation: H01L21/312;H01L21/302;H01L21/027;G03F7/00
Applicant(s) Name: Mitsubishi Denki K. K. Address:
Inventor(s) Name: Takeo Ishibashi;Toshiyuki Toyoshima;Keiichi Kataya
Attorney & Agent: wang yonggang
Abstract:
    A resist pattern, containing a material capable of generating an acid by exposure to light, is covered with a resist containing a material capable of crosslinkage in the presence of an acid. The acid is generated in the resist pattern by application of heat or by exposure to light, and a crosslinked layer is formed at the interface as a cover layer for the resist pattern, thereby causing the resist pattern to be thickened. Thus, the hole diameter of the resist pattern can be reduced, or the isolation width of a resist pattern can be reduced.
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