| Title: | Phase shift photomask and method for improving printability of a structure on a wafer | ||
| Application Number: | 200480040252 | Application Date: | 2004.11.17 |
| Publication Number: | 1902468 | Publication Date: | 2007.01.24 |
| Approval Pub. Date: | Granted Pub. Date: | ||
| International Classifi-cation: | G01F9/00;G03F9/00;G03C5/00 | ||
| Applicant(s) Name: | Dupont Photomasks Inc. | Address: | |
| Inventor(s) Name: | Nakagawa Kent | ||
| Attorney & Agent: | yang kai liang yong | ||
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Abstract: |
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| A phase shift photomask and method for improving printability of a structure on a wafer are disclosed. The method includes providing a photomask including a zero degree PSW formed on a top surface of a substrate and a 180 degree PSW formed in a first region of the substrate. An orthogonal PSW that facilitates projection of an increased intensity of radiant energy through a second region of the substrate during a lithography process is formed in the second region between the zero degree PSW and the 180 degree PSW. | |||
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| Time: | 11 | ||
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