Title: Chip for photomodulation thermoimaging system and its making method
Application Number: 02136625 Application Date: 2002.08.23
Publication Number: 1400486 Publication Date: 2003.03.05
Approval Pub. Date: Granted Pub. Date: 2004.10.27
International Classifi-cation: G02B5/20,G02F1/21,G03B21/14
Applicant(s) Name: Shanghai Inst. of Microsystem Address: 200050
Inventor(s) Name: Xiong Bin, Feng Fei
Attorney & Agent: pan zhen
Abstract:
     The invention refers to a chip applied in the light-modulation hot-imaging system as well as the making method, belonging to the field of as to the micro-electronic mechanical system. The chip is made up of the filtering piece, the half lens, and the micro-lens array. Its character lie in that the micro-lens reflecting surface and the half-lens surface make up two reflecting surfaces of the F-P cavity whose distance is one fourth of the radiant wavelength of incient infrared. The making character is as follows: select the thickness-appropriate silicon film ans SOI silicon slide of SiO2 film; photoetch the micro-lens array pattern, corrode the silicon film and the SiO2 film, reheat the silicon oxide and evaporate the aluminium film on it, which makes the total thickness of the two layers of films equal to that of the SiO2 film in the original SOI silicon piece.
Time: 4