Title: Thin-film transistor LCD and its making method
Application Number: 00131997 Application Date: 2000.11.03
Publication Number: 1353328 Publication Date: 2002.06.12
Approval Pub. Date: Granted Pub. Date: 2004.05.26
International Classifi-cation: G02F1/136
Applicant(s) Name: Daqi Science and Technology Co Ltd Address:
Inventor(s) Name:
Attorney & Agent: tao fengbei
Abstract:
     A thin-film transistor LCD is prepared through such steps as providing a base palte, defining transistor area, capacitor area, pixed area and grid pad area, generating the first metal layer, defining its pattern, forming grid electrodes, capacitor electrodes and grid pad, sequentially depositing insulating layer, semiconductor layer, Si-doped layer and the second metal layer, defining their patterns, generating isoland-shaped transistor structure and capacitors, removing the second metal layer, Si-doped layer, semiconductor layer and insulating layer to expose the base plate of pixel area and the grid pad of grid pad area, completely depositing the transparent conducting layer, and defining its pattern.
Time: 5