Title: Photon crystal quantum trap structure and its preparing process
Application Number: 00137208 Application Date: 2000.12.28
Publication Number: 1320828 Publication Date: 2001.11.07
Approval Pub. Date: Granted Pub. Date: 2003.06.11
International Classifi-cation: G02F1/015
Applicant(s) Name: Fudan Univ Address: 200433
Inventor(s) Name: Zi Jian, Qiao Feng
Attorney & Agent: yao jingfang
Abstract:
     A quantum trap structure of photon crystal is disclosed. Said photon crystal is made of two different dielectric materials A or B. The quantum trap structure is made up by arranging them in order of A-B-A. By selecting proper structure and dielectric constants, the photonic energy band structure of quantum trap, that it, central photon crystal is different from that of potential barrier, i.e the photon crystal at both ends, which makes the transmission characteristics of optical waves able to be modulated, resulting in many novel physical phenomena.
Time: 5
<- Previous Patent:Raman enlarged optical enlarger   |  Next Patent:Method of vertically transmitting... ->