Title: Radiation detector
Application Number: 200580015270 Application Date: 2005.05.12
Publication Number: 1954442 Publication Date: 2007.04.25
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: H01L31/115;G01T1/24;H01L27/14;H04N5/32
Applicant(s) Name: Tokyo Shibaura Electric Co. Address:
Inventor(s) Name: Mikoshiba Yoshiko;Aida Hiroshi;Kawasaki Yasuaki;On
Attorney & Agent: shenzhao kun
Abstract:
    An X-ray detector capable of improving the detection sensitivity of a photoconduction layer. Heavy-metal halogenide and halogen are allowed to be contained in a photoconduction layer, whereby the photoconduction layer is rendered to be a stable one by limiting changes due to X-ray radiation in dark current characteristics, sensitivity characteristics and residual image characteristics. An excessive halogen contained in a photoconduction layer can limit the dissociation of halogen in a heavy metal halogenide crystal structure that is likely to occur at X-ray application and therefore a crystal defect resulting from this halogen dissociation. A dissociation of halogen will produce a defect level in a photoconduction layer to form a charge-deep trap, thereby affecting dark current characteristics, sensitivity characteristics and residual image characteristics. Too excessive halogen in a photoconduction layer will deposit halogen in a grain boundary, thereby preventing conductivity between fine crystals in a photoconduction layer and significantly inhibiting the sensitivity characteristics and residual image characteristics of an X conduction layer to allow a residual image to linger.
Time: 10
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