Title: Chemcial sensor
Application Number: 90101985 Application Date: 1990.04.10
Publication Number: 1055601 Publication Date: 1991.10.23
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: G01D5/00,G01N27/26
Applicant(s) Name: Institute Po Microelectronica Address:
Inventor(s) Name: Balin Balinov Balinvo, Stoyan Kostov Ovcharov
Attorney & Agent: WANG YIPING
Abstract:
     The present chemical sensor includes a solid semiconductor substrate in which a source region and a drain region painted with an insulating layer and separated by a chennel region are formed. The source region and drain region have metallic bar electrodes. On the insulating layer, is placed polarized electrolyte with a reference electrode. It is a hybrid controllable GBLM structure, i.e. on the insulating layer over the channel region, are formed a liquid film taking the shape of volume storage layer and a dimolecular layer on which polarized electrolyte is placed. Both the volume storage layer and the dimolecular layer may be formed in contact mode over the chamel region.
Time: 8