Title: Low-temperature film pressure sensor and producing method thereof
Application Number: 200610105162 Application Date: 2006.12.14
Publication Number: 1975358 Publication Date: 2007.06.06
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: G01L19/00;G01L19/04;G01L9/04;G01L7/08
Applicant(s) Name: No.11 Rosearch Inst., No. 6 Inst., China Aerospace Address:
Inventor(s) Name: Chen Huaili;Liu Benwei;Li Hui
Attorney & Agent: wangshao wen
Abstract:
    This invention disclosed a low-temperature film pressure sensor which consists of take-over neb, film slice, film, transfer seat, hull and jack. The film contains transition layer, insulation layer, resistance layer, compensate resistance layer and weld layer. The manufacture technique was as follows: choose a film, set transition layer, insulation layer, resistance layer, compensate resistance layer and weld layer on this film, photoengrave to obtain weld plate, temperature compensate resistance, zero temperature compensate resistance, strain rosette and zero compensate resistance, modify the value in the above resistance using laser modifying method, assemble the sensor. This invention shows high efficiency and precision.
Time: 5
<- Previous Patent:Two-way torque detector   |  Next Patent:Monolithic integrated sensor chip... ->