Title: Detector converted on infrared wavelength, near-infrared wavelength
Application Number: 200610028489 Application Date: 2006.06.30
Publication Number: 1873392 Publication Date: 2006.12.06
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: G01N21/25,G01J1/00
Applicant(s) Name: Shanghai Inst of Tech Physics, C.A.S Address: 200083
Inventor(s) Name: Lu Wei, Liu Zhaolin, Zhen Honglou, Li Ning, Li Zhi
Attorney & Agent: guo yang
Abstract:
     The invention discloses infrared-near-infrared wavelength conversion detector which can integrate InAs multi-quantum point infrared detector and light-emitting diode into one chip. The former is made up of InAs/InyGa1-yAs/GaAs which alternately grows for ten cycles. The latter is made up of GaAs barrier layer and InzGa1-zAs active potential well layer. It can transform long wave thermal infrared to near infrared light without grating. This can simplify detecting system structure. The used material has mature preparation technology and good uniformity.
Time: 3
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