Title: Method for producing amorphous silicon thermal imaging detector micro-structure with self-supporting
Application Number: 200610104434 Application Date: 2006.07.31
Publication Number: 1889235 Publication Date: 2007.01.03
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: H01L21/18;G01J5/10
Applicant(s) Name: Xian Polytechnic Univ. Address:
Inventor(s) Name: Liu Weiguo;Cai Changlong;Liu Huan;Zhou Shun
Attorney & Agent: cheng xiaoxia
Abstract:
    The present invention provides method for making self -supported non-crystalline silicon thermal imaging decetor micro architecture on silicon wafer, adopting non-crystalline silicon as infrared sensitized material to make non-refrigeration focal plane infrared thermal imaging detect array. It contains plating certain of thickeness PI glue as sacrificial layer, adopting PECVD method to make low stress having self supporting capacity non-crystalline silicon sensitivity film, solidifying and vulcanization treatment to PI glue by fast cycle heat treatment, finally adopting plasma reaction etching to remove sacrificial layer PI glue and the rest photoresist to obtain overhead structure self supported non-crystalline silicon non - refrigeration focal plane infrared thermal imaging detect array microarchitecture.
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