Title: Method for producing lead zirconate-titanate thin film infrared thermal imaging detector hanging structure
Application Number: 200610104433 Application Date: 2006.07.31
Publication Number: 1889284 Publication Date: 2007.01.03
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: H01L37/02;H01L31/18;G01J5/10
Applicant(s) Name: Xian Polytechnic Univ. Address:
Inventor(s) Name: Liu Weiguo;Cai Changlong;Liu Huan;Zhang Wei;Zhou S
Attorney & Agent: cheng xiaoxia
Abstract:
    The present invention refers to method for making lead zirconate titanate film infrared thermal imaging decetor hanging structure. It contains plating certain of thickeness magnesia film on silicon wafer as sacrificial layer for preparing lead zirconate titanate film non - refrigeration focal plane infrared thermal imaging decetor hanging structure, and through controlling sacrificial layer thickeness to control hanging height, adopting plasma enhancing CVD method preparing SiNx for balancing lead zirconate titanate thin-film stress, using fast cycle heat treatment method to share electrode Ti/Pt and lead zirconate titanate sensitivity film making fast cycle heat treatment to obtain high performance lead zirconate titanate film. The present invention mainly solves decetor hanging part with substrate connective problem, having simple removing sacrificial layer material method and fine consistency with other structure.
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