Title: Infrared detector of micro mechanical thermopile, and preparation method
Application Number: 200610118474 Application Date: 2006.11.17
Publication Number: 1960017 Publication Date: 2007.05.09
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: H01L35/32;H01L35/34;G01J1/42;G01J5/12
Applicant(s) Name: Shanghai Inst of Microsystem and IT Tech, C.A.S Address:
Inventor(s) Name: Xiong Bin;Yang Hengzhao;Li Tie;Wang Yi;Wang Yuelin
Attorney & Agent:
Abstract:
    Characters of the disclosed detector structure are that the suspension film structure as infrared absorption layer possesses etched openings in multi shapes; using isotropic dry etching etches substrate from front face so as to form release device in suspension film structure; substrate of detector and the infrared absorption layer suspended at middle of frame constitute cold junction area and hot junction area of thermopile respectively; being connected to frame and infrared absorption area, support arm loads and supports the thermopile; middle suspended infrared absorption layer with etched openings in multi shapes is as channel for working gas to enter substrate ca carry out reaction in dry etching. Common material used in normal CMOS technique is adopted so as to be easy to integrate to signal process circuit. Comparing with traditional wet etching, the invention simplifies technical flow, lowers requirement for mask aligner, and widens available materials for detector.
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