Title: Pressure resistance vector hydrophone device
Application Number: 200520021573 Application Date: 2005.09.05
Publication Number: 000000000 Publication Date:
Approval Pub. Date: 2007.01.03 Granted Pub. Date: 2007.01.03
International Classifi-cation: G01H3/00;H04R1/44
Applicant(s) Name: No.49 Inst., China Electronic Science Address:
Inventor(s) Name: Yang Shie;Fan Maojun;Chen Lijie;Li Shiguang;Zhang
Attorney & Agent: liu qiangji
Abstract:
    This utility model relates to a vector hydrophone, namely a piezoresistive vector hydrophone device, characterized in that: the cantilever beam structure (1) and the quality structure (4) used in the sensitive sound signals are made from the micromachining at the silicon monocrystalline chip. Plant the intermingled resistance (2) into the beam structure to sense the strain signals and bond with the silicon chip with a shallow grove structure (6) at the bond surface (5). The gas that is sealed in the spacing structure (3) can be used for generating the damping. A semiconductor pressure sensitive resistance (2) is mounted at the cantilever beam structure (1). The spacing structure (3) separates the cantilever beam structure (1) and the quality structure (4). The grove structure (6) is furnished at the bottom structure of the silicon monocrystalline material (7) and the silicon monocrystalline with a sensitive structure at the bond surface is statically sealed and cemented with the bottom structure of the silicon monocrystalline material (7). The advantages for this utility model include: simple structure, low cost, safety and reliability, convenient for use, small volume and high sensitivity of the sensor and whose manufacturing process is very simple.
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