Match Application Number Document Title
1 03143858 Manufacturing method of photo etching apparatus and device
A lithographic apparatus uses the control signal from a computer (10) to drive two spatial light modulators (11, 12) to pattern two separate projection beams (13, 14) for projection onto...
2 02143132 Integrated circuit plate loading substrate with over-voltage protection functio...
The invention discloses an integrated circuit bearing base plate having excess voltage protection function, wherein one base plate can provide a plurality of excess voltage protection as...
3 85100030 Thin film SnO2 gas-sensitive element and manufacturing method
The heating film of the thin film gas sensitive element is SnO2 film, contained a certain quantity antimony and the sensitive film is also SnO2 film. The element has stability performanc...
4 94193248 Heat insulating plate and heat insulating method using same
The invention relates to a heat insulating plate based on a new heat insulation theory which makes use of thermal gradient and a heat insulating method using the plate. The heat insulatin...
5 85100051 Low-temp. sinfered piezeoelectric ceramics and its piezeoelectric transformer o...
The low temp. sintering can be realized with this invention by method of mixing boron-bismuth-cadmium low melting glass into piezeoelectric ceramics of lead zirconate titanate. The sinte...
6 98803128 Nitride semiconductor device
A nitride semiconductor device such as a light emitting device in which an active layer is formed between an n-type semiconductor region consisting of one or more nitride semiconductor la...
7 94193352 Multi-chip module
Bare chips (201 to 203) are mounted on regions (101 to 103) of a printed wiring board (100), respectively. The chips are soldered to a motherboard at external electrode pads (105) on thei...
8 98800020 Ingot plate made of thermoelectric material
An ingot plate (10) of cleaveable thermoelectric material has a layered structure having substantially parallele cleavage planes. Substantially all of the cleavage planes are disposed at ...
9 200610163962 Nitride semiconductor device
A nitride semiconductor device such as a light emitting device in which an active layer is formed between an n-type semiconductor region consisting of one or more nitride semiconductor la...
10 200610004486 Nitride semiconductor device
A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one ...
11 00815580 Highly stable packaging substrates and brominated indane derivatives
A method of producing a highly stable packaging substrate in which are provided a first precursor having a first backbone and a first ethynyl group, and a second precursor having a second...
12 00804949 DRAM cell arrangement and method for producing the same
Bit lines are arranged in the lower parts of trenches of a substrate. Word lines are located above the substrate except for protuberances or bulges, which extend downwards into the trench...
13 85100131 Instantaneous annealing equipment for ion-implanted semiconductor
This invention is characterized by using HF to heat graphite blanket and quartz annealing chamber and to fill with blanket gas. In this invention, the temperature rises fastly, the equip...
14 85100099 Method for solar generating energy and the device thereof
The technology is characterized by utilizing a solar energy cell to convert light directly into electricity. Then utilizing a semiconductor thermoelectric generator to generate electrici...
15 85102328 Cooling device of semiconductor integrated circuit board
This cooling device can conduct heat by means of thin rediating plates which are matched together with the aid of a small gap. The bottom of each heat-conducting element is coupled with ...
16 85101868 Image sensor which is insensitive to blurry phenomena and the process of it
The image sensor is composed of a substrate of semi-conductor which has a lot of channels connecting surface. The channel zones are separated from each other by channel separating zones ...
17 85101787 Integrated circuit comprising field defect transistors
IC comprises complementary and field effect transistors which belong to normal abort and depletion type transistors. Both of them have a surface layer in the channel section. The surface...
18 85102150 Charge-coupled device
This invention describes a n-phase charge coupling device which has a number of parallel input terminals and an array of light-sensitive elements coupled with the charge coupler via said...
19 85102308 High antijamming HP-MOS IC serias
The IC has a noise margin which is close to the ideal value. Its antijamming performance is better than that of C-Mos and HTL. When a proper capacitor is connected with it, its antijammi...
20 85102326 Method of mfg.semiconductor devices in which material is deposited from a react...
In the method a number of slices of semiconductor material are heated in a reactor tube arranged inside a furnace tube and having a tube wall which is provided with openings, through whi...
21 85102335 Composite ultrasonic transducers and methods for making the same
A ultrasonic transducer using such a piezoelectric composite that a number of piezoelectric poles made of piezoelectric ceramics are arranged in a plate-like polymer matrix perpendicular...
22 85101827 Method of mfg. silicon semiconductor device with subsiding oxide layer in parti...
After the first oxide masking, a subsiding area is formed on the surface of a silicon chip. Its extension on both side faces is under the 1st oxide masking. After the 2nd oxide masking, ...
23 85101843 Electric Insulation thin layer
An electric insulation thin layer comprising a non-monocrystalline substance, being deposited on a substrate by means of a plasma CVD method or a spatter method, and having a carbon cont...
24 85100228 Indirect coupling silicon photosensor
In the rilicon photorensor using the planar procers, diodes. transistors and other electronic devices are derictly made on a P-N junction accepeting incident light. (shortly as "photoren...
25 85100426 Na.K.Bi-titanate serie piezo-electric ceramics for ultrasonic transducer
The composition of this stuff is XNa0.5, Bi0.5, TiO3-(1-X) K0.5,Bi0,5 TiO3, in that X=0.8~0.99, and a small amount of upgrading additive is added. The additive is 0.1-3% (wt.) MnO2.Fe2O2...
26 85100410 Process for passivating mesa semiconductor devices with glass
In this process, the electrophoretic method used aluminium nitrate as the electrolyte is applied to put the glass powder into grooves on stepped P-N junction mesa and the glass powder is...
27 85100237 Two-wavelength demultiplexing colour sensor
The present invention uses reverse bias P-n juction and silicon substrate with high doping as internal opital filter so that demultiplexing wavelength has been realized and overlapping q...
28 85100507 Modifed lead barium sodium niobate piezoelectric ceramic material
This invention relates to wolfram-bronze type modified lead barium sodium niobate piezoeletric ceramic material, and features simple manufacture technology, good repeatability, higher co...
29 85100503 Reflective cavity of semiconductor light-emitting device and its technology
The Monocrystalline silicon has the characteristic of anisotropic corrosion. Making use of this property, various kinds of cuboidal and rectangular cone reflective cavities are formed on...
30 85100501 Method of manufacturing mesa-typed semiconductor device
This technique is to manufacture a mesa-typed semiconductor device, in which both sides of a transistor stem on the substrate of formed semiconductor device pattern are slotted by an eme...
31 85100477 Treatment method for preventing ferroelectric ceramics device from crack during...
This method is characterized by that the ferroelectric ceramics device is treated in a d.c. field ranged from 1.5 to 2.5 kv/mm at a temperature range which is 50 to 150 deg.C higher than...
32 85100512 Method of dopping non-crystalline silicon with airborne dopant
This invention takes simple substance or compound of 3-V elements in the periodic table as a dopant, which will mix and react with SiH4 in reaction chamber to produce the doped non-cryst...
33 85101635 Integrated circuit for digitallised electronic instrument
An electronic instrument in which there is an internal bus is composed of: a) D/A converter for converting the data string controlling signal into the corresponding analog signal. b) man...
34 85100504 Radio frequency sputtering method for manufacturing semiconductor compound thin...
This invention relates to a method for manufacturing 3-V compound semiconductor thin film of high steam pressure component. Intending the sputtering film to have a better stoichiometric ...
35 85100514 Non-crystalline silicon camera target
This non-crystalline silicon camera target relates to a new type camera tube. The camera target, with high sensitivity and of simple process, is manufactured by doping the non-crystallin...
36 85100513 Bi-Na-Ba-TiO3 series piezoelectric ceramic material for ultrasonic devices
This invention relates to a piezoelectric ceramic material of binary system. It has the high Kt and Nt as well the small Kp and d. So its Kt/Kp is large. It is a preferred material to us...
37 85100531 LPCVD furnace tube with double structure
During epitaxial process, thermal expension coefficient of silica tube is diffrent from that of silicon or other epitaxial materials so that the epitacial silica tube is easily destroied...
38 85100519 Infra-red locator of composite thermoeletrics
The characteristics of this locator are that a thermoelectric response element consists of a conducting endothermic layer and a grid thermoelectric material slice, the sensitivity of whi...
39 85100709 Surface acoustic wave(S.A.W.)-acoustic grating type radio frequency spectrum an...
The surface acoustic wave (S.A.W.) is deflected and focused by means of Bragg linear frequency modulation acoustic grating, then the plurality of frequency compsns. are received respecti...
40 85100703 Compactive porous sandwich piezoelectric ceramics
The dense-porous-dense sandwich structured compound piezo-electric ceramics material is manufactured with general piezo-electric ceramics technology, enabling the material to have low de...
41 85100569 Single source vacuum deposit method to make vario-refraction-index film
This invention is a physical vacuum evaporation method to make vario-refrachion-index film on base material. The key to this problem is the manufacture of base material and the applicati...
42 94193611 Endoscope with a movable frontal end area
An endoscope has a pipe with a movable section in its frontal end area. At least one miniaturized electric drive element is provided in the pipe of the endoscope for moving the movable se...
43 94112278 Color freely changeable fully-centralied extra-high photo effect solid photo so...
The characteristic lies in that a circular cylinder tube holder is casted from engineering plastics, the upper part of the tube holder forms a condave-inward parabolic reflector. On two ...
44 94193248 Heat insulating plate and heat insulating method using same
The invention relates to a heat insulating plate based on a new heat insulation theory which makes use of thermal gradient and a heat insulating method using the plate. The heat insulatin...
45 94112298 Hot-wall sealed low-temp-pressure silicon dioxide thin-film deposition technolo...
The present invention relates to a technique for depositing silicon-dioxide film by using low-temp,. low-pressure hot-wall closed packing method. The silicon-dioxide film deposited by us...
46 94115341 Refractory metal capped low resistivity metal conductor lines and vias formed u...
Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the hard, reduced wear, propert...
47 94193352 Multi-chip module
Bare chips (201 to 203) are mounted on regions (101 to 103) of a printed wiring board (100), respectively. The chips are soldered to a motherboard at external electrode pads (105) on thei...
48 94116315 Semiconductor self-refrigerating thermoelectric generation
The semiconductor self-refrigerating thermo-electric generation features no energy consumption and may be used for electric generation and refrigeration. Semiconductor freezer and semico...
49 94116558 Ammonia sensitive semiconductor elements and manufacture thereof
The ammonia sensitative semiconductor device with 4 pins (one for drain and grid and others for source, heating resistor and N electrode of temp control diode respectively) for alarm, le...
50 98108911 Semiconductor device and method for manufacturing the same
A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating ...
51 98115594 Semiconductor device and manufacturing method for the same
A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is form...
52 94190926 Solar cell module having surface coating material for three-layer structure
A solar cell module comprising a photovoltaic element (solar cell) enclosed by a filler material and a coating material having a three-layered structure which is disposed on the light rec...
53 200610100800 Semiconductor device and a manufacturing method for the same
A semiconductor device of the invention includes: a silicon island on a substrate having an insulating surface, the silicon island comprises a source, a drain and a ditch between the sour...
54 200610101853 Semiconductor device and a manufacturing method for the same
A semiconductor device of the present invention, including, the silica upon the insulating substrate having the insulator surface, the silica contains source electrode, leaking electrode...
55 94190776 Process and apparatus for etching semiconductor wafers
Process for etching a semiconductor wafer which includes the steps of rotating the wafer, and contacting the rotating wafer with a flowing froth, the froth being formed, at least in part,...
56 94194455 Improved quantitation of gamma and X-ray emitting isotopes
For isotopes decaying by capture of an inner shell electron by the nucleus, coincident emission of X-ray and gamma photons may occur. The X-ray results from the drop of an outer shell ele...
57 200610077821 Display device
In a semiconductor integrated circuit, a plurality of thin film transistors (TFTs) are formed on the same substrate having an insulating surface. Since gate electrodes formed in the TFTs...
58 94116968 Integrated circuit electronic information-storage card and its packing method
A packing technology for integrated circuit electronic information memory card (IC card for short) uses IC binding gum to bind the IC chip directly on the soft contact board (duble face ...
59 200310103678 Thin-film semiconductor integrated circuit and mfg. method thereof
In a semiconductor integrated circuit, a plurality of thin film transistors (TFTs) are formed on the same substrate having an insulating surface. Since gate electrodes formed in the TFTs...
60 95109897 Large deformation piezoelectric ceramic device
The piezoelectric ceramics device with big deformation has dimorphic piezoelectric ceramic plates involving positive- and negative-deforming piezoelectric ones. The output of each plate ...
61 95115593 Interface apparatus for automatic test equipment
The invention provides an interface operates between a test head of an automatic testing device and a handling device such as a prober. The interface bas a preloaded dynamic coupling betw...
62 95116667 A signal processing method, a method of adjusting a position detecting optical ...
The invention provides a target pattern which can obtain a position detection signal of excellent contrast and symmetry. A target pattern 1 detected by a position detecting optical system...
63 95116679 Back reflector layer, method for forming it, and photovoltaic element using it
An object of the present invention is to provide a back reflector layer in a texture structure with a high reflectivity by preventing oxidation of a ground metal or alloy, and a method fo...
64 95108805 Semiconductor diode consisting of groove form casing component and packaging me...
The semiconductor diode includes chip, shell and conductor. Said chip is silicon rectifier diode, voltage regulator diode or signal switch diode, and its structure is made up in the form...
65 95108782 Light-emitting diode array and method for fabricating the same
The light-emitting diode array of the invention includes: a semiconductor substrate of a first conductivity type and a plurality of light-emitting elements linearly arranged on the substr...
66 200410043530 Semiconductor circuit for electro-optical device and method of manufacturing th...
In a monolithic active matrix circuit formed on a substrate, the active regions of at least a part of the thin film transistors (TFTs) constituting the peripheral circuit for driving the...
67 01103443 Semiconductor circuit for electronic optical device and producing method
In a monolithic active matrix circuit formed on a substrate, the active regions of at least a part of the thin film transistors (TFTS) constituting the peripheral circuit for driving the ...
68 95116832 Semiconductor device and method for fabricating the same
A first electrode and a first insulating layer of electrode insulation are formed on a first semiconductor substrate. A second electrode and a second insulating layer of electrode insulat...
69 95117182 Semiconductor circuit for electro-optical device and method of manufacturing th...
In a monolithic active matrix circuit formed on a substrate, the active regions of at least a part of the thin film transistors (TFTs) constituting the peripheral circuit for driving the ...
70 95117176 Semiconductor device structure
An ultra-thin resin molded semiconductor device of high reliability with low cost and with easy repair at time of mounting. A plurality of these semiconductor devices are stacked to provi...
71 95117116 Semiconductor device and method of manufacturing the same
A semiconductor device includes a substrate, an insulation film formed above the substrate and containing silicon-fluorine bonds, and a titanium-based metal wiring layer formed on the ins...
72 95111488 Method for prepn. of odd number nylon iron electric body
A process for preparing high-temp ferroelectrics used in sensor and storage fields includes making uniform film of 1-100 microns in thickness with odd nylon, evaporating Au, Al or Ag ele...
73 95116817 Method for etching semiconductor, method for fabricating semiconductor device, ...
A method of etching a III-V compound semiconductor uses an etching gas including the group V element of the III-V compound semiconductor substrate layer while keeping the III-V compound s...
74 95116824 High shutoff voltage and thin type block-able gate transistor
The present invention provide a GTO which, starting from the anode-side main surface (2), comprises an anode emitter (6), a barrier layer (11), an n-base (7), a p-base (8) and a cathode e...
75 95118446 Insulated-gate device (IG device) having narrowbandgap-source structure and met...
A structure of a semiconductor device and a method of manufacturing the same is provided wherein a leakage current can be reduced while improving a drain breakdown voltage of an Insulated...
76 95116879 Combined electronical assembly and making of same
A composite electronic component including a resonator element and a capacitor element fixed together by adhesive material. The capacitor element is longer than the resonator element, so ...
77 95115736 Plasma treating device
A plasma processing apparatus includes a vacuum vessel, a substrate electrode, a discharge coil, a high frequency power source, and a matching circuit that is connected to the discharge c...
78 95195345 Fixed value storage cell arrangement and method of producing the same
A read-only-memory cell arrangement comprises memory cells, each having a vertical MOS transistor, in a substrate (21) made of semiconductor material, the various logic values (zero, one)...
79 95117705 Method for making nonvolatile memory
The present invention discloses a method of manufacturing a nonvolatile memory device. According to the present invention, in a nonvolatile memory device in which an equal voltage is appl...
80 03149104 Polishing method and device
The invention relates to a polishing method and device, adopting the mill stone including abrasive particles and bonding resin bonded with the abrasive particles. It uses the bonding resi...
81 95115160 Method of fabricating semiconductor device
Thin-film transistors (TFTs) having characteristics comparable to those of a single-crystal silicon wafer are provided. A buffer film made from silicon oxide is formed on a first amorphou...
82 200410097810 Manufacturing method of semiconductor device
In a producing a thin film transistor, a solution containing a metal element for promoting crystallization of silicon is added in contact with an amorphous silicon film, and then a silici...
83 95118439 Method of manufacturing semiconductor device having various types of MOSFETS
In a method of manufacturing a semiconductor device including a first MOSFET for a non-volatile memory element, a second MOSFET for an input protecting element and a third MOSFET for a lo...
84 95117780 Method for producing semiconductor device
In a producing a thin film transistor, a solution containing a metal element for promoting crystallization of silicon is added in contact with an amorphous silicon film, and then a silici...
85 01137433 Manufacturing method of semiconductor device
In a producing a thin film transistor, a solution containing a metal element for promoting crystallization of silicon is added in contact with an amorphous silicon film, and then a silici...
86 01139471 Method for manufacturing semiconductor
In producing a thin film transistor, after an amorphous silicon film is formed on a substrate, a nickel silicide layer is formed by spin coating with a solution (nickel acetate solution) ...
87 95118605 Method of manufacturing a thin film semiconductor device
The patent relates to a thin-film transistor to reduce a leakage current between source/drain of a thin-film transistor. Etch the silicon by means of a liquid or a non-ionized gas, to fo...
88 95116287 Structure and production of silicone semiconductor diode and chip and their ins...
The connected diode insulator component is suitable for the mass prodn and assembly of devices and modules. Each unit in the component is provided with one or several chip mounts, on whi...
89 95116288 A pneumatically coupled heat sink assembly
A heat sink assembly (100) employs multiple heat sinks that are juxtaposed to provide pneumatically coupled air flow pathways. At least one of the heat sinks preferably includes an air ci...
90 95118410 Method for producing semiconductor device
In producing a thin film transistor, after an amorphous silicon film is formed on a substrate, a nickel silicide layer is formed by spin coating with a solution (nickel acetate solution) ...
91 200510005697 Method for producing semiconductor device
In producing a thin film transistor, after an amorphous silicon film is formed on a substrate, a nickel silicide layer is formed by spin coating with a solution (nickel acetate solution) ...
92 95195722 Vertical geometry light emitting diode with group III nitride active layer and ...
A light emitting diode (20) emits in the blue portion of the visible spectrum and is characterized by an extended lifetime. The light emitting diode comprises a conductive silicon carbide...
93 95117312 Semiconductor device and method for mfg. same
A semiconductor device containing a polycrystalline silicon thin film wherein crystal grains of the silicon thin film have mainly a columnar structure and a crystal orientation of individ...
94 95196560 High-voltage generator
A high voltage generator is provided for use in applications where current demand is low but a high voltage is required. The high voltage generator comprises an array of votage generating...
95 95117359 Enhanced mobility MOSFET device and method
An enhanced mobility MOSFET device (10) comprises a channel layer (12) formed on a monocrystalline silicon layer (11). The channel layer (12) comprises an alloy of silicon and a second ma...
96 95191180 Current-limiting device
In order to limit overload currents in electric lines, caused by a short circuit for instance, the invention calls for a current limiter to be inserted in the electric line to limit the o...
97 95112707 Method for preparation of silicon quantum wire using SiGe/Si heterogeneous stru...
The preparation method of silicon quantum line by using SiGe/Si heterostructure is characterized by that a Si/SiGe/Si heterofilm is grown on silico monocrystal, and a channel is formed b...
98 95116843 Method for forming contact holes in semiconductor device
A method for forming contact holes in a semiconductor device, involving formation of a ring-shaped pad at a contact region. The ring-shaped pad is used as an etch barrier film upon formin...
99 97193435 Semiconductor integrated circuit
The invention concerns a semiconductor integrated circuit with a component (3) which is formed on a semiconductor substrate (2) and comprises an active PN junction (6) formed between a fi...
100 95118643 Nonvolatile semiconductor device having side wall split gate for compensating f...
In a nonvolatile semiconductor memory device, including a semiconductor substrate, a floating gate formed over the semiconductor substrate, and a control gate formed over the floating gat...
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