Buoyancy czochralski furnace
The furnace (code name FTD) is a new type of single crystal growing furnace which utilizes the principle of buoyancy effect for pulling the monocrystals. It utilizes the action of tap wa...
High temp. crystal growing unit using temp. gradient method
The invention concerns a unit, as an improvement of existing ones, consists of the crucible, the heater, and the thermal shielding device. A more desirable crucible is provided, it has t...
Monocrystal growing apparatus
To increase the growing speed of monocrystal is bound to raise the temperature gradient inside the solid phase monocrystal near the solid liquid interface. It would be better to decrease...
Method of growing KTP monocrystal from the molten salt
This invention concerns a method for growing KTP monocrystal using KTiOPO4 cpd. as raw material and potassium poly-phosphate as flux. The equipment required for crystal growth, and their...
Method and device for growing bar shaped ruby
This invention concerns a technology of moistening guided mould by means of which the bar shaped ruby of predetermined section and size can be grown directly from fused mass.The crystal ...
Single crystal growing device
This invention consists of a pair of coils, which are situated on surrounding of the crucible used for melting the crystal. When coils are excited, magnetic forces are opposition each ot...
Artificial gem of high reflectance
A gem is produced by blending metalic elements of rare-earth, Nb3 ... into oxygen-contlaining octahedron single crystal of niobate. Gem thus produced has high index of refraction (2.2-2....
Technology of tellurium dioxide single crystal growth
This invention discloses a new method of single crystal formatin, by which various shaped single crystals with different directions of crystalline axis may be developed by means of the p...
18
86100393
Process
The process and device of growing KTP crystal by flux method is a technique of molten salt cooling method to grow crystal. Using KPO3 and K4P2O7 as flux agent, putting certain proportion...
19
86100854
Method for making heavy Sb-admixed silicon monocrystal
The claimed method is characterized by the use of nitrogen gas as protective atmosphere (negative pressure-ordinary pressure-negative pressure) in the processes of silicon melting, antim...
Method for growing of colour crystal
This invention is about a method for the growing of colour crystal. According to the crystallization characteristics of the crystal, we choose the favourite seed section ( y, -y, (30-80 ...
Two-source method and apparatus for multilayer epitaxial GaAs
In order to obtain the Te or Sn-doped GaAs multilayer structure, the cut single-crystal wafers of Te or Sn.doped heavyly GaAs are placed as a doping source in an etched zone after the Ga...
30
86107119
Method of producing wafer There is disclosed a method of providing an elongated stock; producing a wafer comprising the steps of processing one end face of an elongated stock to form a first flat surface; cutting ...
31
86106896
Preparation of MgO.LaO.Al2O3.NdO single crystal Mixed lathanum-magnesium aluminates, their production process and lasers using these aluminates. These lasers comprise two flash lamps for longitudinally pumping a bar of an aluminate of ...
32
86104713
Method and apparatus for eliminating fractionation
This invention is relevant to a gas-phase chemical reaction using several liquid substances as raw materials, esp. to a field of the blended gas-phase chemical deposit technology. In ord...
Method and system for mfg. semiconductor devices An improved semiconductor device manufacturing system and method is disclosed in which undesirable sputtering can be averted by virtue of the combination of an ECR system and a CVD system...
Growing the imitation cat's eye ruby
This patent is a technique for growing high-quality decoration cat's eye ruby. Inside the ruby bar grown with this technique is a deep red color-stripe parallel to the growing axis and t...
Lithium-rich, highly magnesium blended lithium niobate crystals
The lithium niobate crystals, an optical material with good electro-optical properties and nonlinear optical performance, is used to make light modulator, Q switch, optical frequency mul...
Process for growing shaped single crystals A process for growing shaped single crystals of refractory optically transparent metal compounds comprising melting a starting stock in an inert gas atmosphere under the effect of heat ev...
Method for synthesizing modified pyrolytic electric monocrystal
This invention is involved with an infrared pyrolytic electric material. The pure TGS monocrystal as a pyrolytic electric material is widely used to make infrared sensor, thermal kinesco...
46
88100679
Process for producing optical waveguide and product therefrom A process for producing an optical waveguide comprising contacting at least one optically smooth surface of a single crystal of K1xRbxTiOMO4 wherein x is from 0 to 1 and M is P or As with...
Defect control technology of silicon wafer for CMOS device
A mathos of semiconductor material, is given, especially for CMOS device. Which is for defect control by slice of silicon and utilization technology, first, the process straightens out s...
Indium mixed mischcrystal zinc diffusion source
This invention is a kind of material special for making semiconductor devices. Zinc diffusion source of mixed crystal with addition of indium is a kind of Zn impurity diffusion source fo...
54
88101744
Crystal growing apparatus An apparatus and process are disclosed for growing tubular crystalline bodies according to the Edge defined, Film-Fed Growth (EPG) process, wherein the apparatus has at least one exterior...
Process for synthesizing large dimond A process for synthesizing a large diamond having a diameter of 8 mm or more by the temperature gradient method, wherein a (111) or (100) surface of a seed crystal having a diameter of 3 ...
Growing method of YAG laser crystal doped with Nd and Ce
This invention is involved with a leading growth method of the laser crystal made of YAG doped with Nd and Ce [(Nd, Ce): YAG], which includes selecting the components, heating, as well a...
60
88104838
Growth of lithium triborate monocrystal and its use
The present invention refers to the growth and use of lithium triborate (LiB3O5) monocrystal. It illustrated the technology of crystal seed growth of non-linear laser crystal LiB3O5 in f...
Liquid phase epitaxy method and equipment of gallium phosphide
In the epitaxy equipment, there is a central passage and a terminal passage. The operating gases entering the reaction area are mixed homogeneously. The doping boat is laid in the centra...
Process of preparing black cubic zir onium oxide precious stone
The present invention discloses a process for the prepn. of black cubic zirconium oxide crystal through thermal treating cubic zir conium oxide under vuccum or reducing or inert atmosphe...
67
89102308
Vapour-phase GaAs/InP hetero epitaxial technique
This technique relates to the growth of GaAs single crystal thin film on InP substrate with chloride VPE system. Through medium layer which protects the non-growth region of substrate, s...
68
89102130
Growth method of urea long-rod crystallon
The present invention relates to a growth method of urea long-rod crystal seed. It uses the solution cooling method and adds the ethanolamine in the urea methanol saturated solution so a...
Preparation of K2ZnCl4 crystal
K2ZnCl4 is a new type of thermal power-release material. It has excellent property of thermal power-release. Its thermal power-release coefficient (P)=1.3*0.000000001 (C/cm2.deg), dielec...
75
89106859
Growth method of colour crystal
Smelting class quartz is used as raw material and K2CO3 as flux. After small quantity of K2Cr2O7, or Fe2(SO4)3.XH2O, or 2CoCO3.3Co(OH)2.XH2O is blended, a yellow, or green, or yellowish ...
Container for use in hydrothermal synthesis
A container for use in hydrothermal synthesis, comprises: a container body to be heated from outside; an inner tubular container which is placed within the container body with a tubular ...
78
90102351
Doping technology of semiconductor
This invention discloses a doping technology of semiconductor by meas of glow discharge that is generated by applying a voltage between two electrodes in thin gas. It can effectively con...
Technology for removing dross on surface of fusant
The present invention relates to technique of removing molten-slag on the melt in CZ mono crystal furnace. A upper crucible which has a small hole on its bottom is installed on a other c...
84
90107021
Double doped laser crystal
This invention relates to a new crystal material for laser. Er3 and Pr3 are co-doped into YAF4G crystal. Under the existance of low-concentration Er3 , its T13/2 energy level as final ...
Method to prepare optical material used for infra-red gas laser
This invention relates to a technological process for preparing IIIA-VA family and IIB-VIA family infra-red optical material used for the window, lens, polarizer, reflector and prism in ...
87
90102951
BGO crystal radioresistance injury reinforcing technology
In this invention, rare earth oxied Eu2O3 is mined into BGO crystal to improve irradiation damage of the crystal. For scattering particles of BGO crystal mixed with europium, the lightne...
Preparation of mercury iodide monocrystal
The invention provides a preparation method of mercuric iodide single crystal. The method comprises of putting the highly pure mercuric iodide raw material into a glass ampoule with pres...
91
90105983
Massive saphire growing technology
The invention provides a new method for producing big sapphire in the electro-vacuum field. The processing method requires a monocrystal furnace to have the low vacuum level kept at 0.01...
92
90106436
Prepn. of monocrystalline silicon carbide short fiber
The present invention refers to the preparation of monocrystalline silicon carbide. It uses powdered silicon oxide microcrystalline as raw material, graphite as reducing agent, and fluor...
93
90109987
Liquid phase epitaxy isoelectron doping process
It features that in the manufacturing process of electronic device, an isoelectronic doping layer is firstly grown on the substrate by using the growing source under a specified temperat...
94
90109706
Process for preparation of star-light gem
This invention is about high mass-mixing wetting guide die technology of morning light gem grown directly from melting body. The obtained morning light gem has six obvious light raies, w...
Mixed matter epitaxy on gallium arsenide substrate
The invention relates to a combination method of VPE and LPE to grow InP and 3-5 group multicomponent crystalline material which matches with InP in crystal lattice on GaAs substrate. By...
100
91101682
Double-layer crucible for preparing semiconducting monocrystal
The present invention relates to a double-layer crucible for growing semiconductor. It consists of inner crucible and outer crucible. The ring-shaped wall of the inner crucible takes the...
